首页 >IXTQ200N06P>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
IXTQ200N06P | PolarHT Power MOSFET | IXYS IXYS Integrated Circuits Division |  | |
IXTQ200N06P | isc N-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
HiPerFETPowerMOSFETs HiPerFET™PowerMOSFETs N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features •Internationalstandardpackages •miniBLOCwithAluminiumnitrideisolation •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated | IXYS IXYS Integrated Circuits Division | | ||
N-ChannelSuperTrenchPowerMOSFET | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯电子上海雷卯电子科技有限公司 |  | ||
DiscreteIGBTs | SIRECTSirectifier Global Corp. 矽莱克半导体矽莱克半导体有限公司(深圳) |  | ||
DiscreteIGBTs | SIRECTIFIERSirectifier Semiconductors 矽莱克电子江苏矽莱克电子科技有限公司 |  | ||
NPTIGBTModules | SIRECTIFIERSirectifier Semiconductors 矽莱克电子江苏矽莱克电子科技有限公司 | |
详细参数
- 型号：
IXTQ200N06P
- 功能描述：
MOSFET 200 Amps 60V 0.006 Ohm Rds
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IXYS |
23+ |
TO-3P |
30000 |
晶体管-分立半导体产品-原装正品 |
询价 | ||
IXYS |
08+(pbfree) |
TO-3P |
8866 |
询价 | |||
IXYS |
1822+ |
TO-3P |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
23+ |
N/A |
49200 |
正品授权货源可靠 |
询价 | |||
IXYS |
18+ |
TO-3P |
41200 |
原装正品,现货特价 |
询价 | ||
IXYS |
1931+ |
N/A |
18 |
加我qq或微信，了解更多详细信息,体验一站式购物 |
询价 | ||
IXYS/艾赛斯 |
23+ |
TO-3P |
90000 |
只做原厂渠道价格优势可提供技术支持 |
询价 | ||
IXYS |
1809+ |
TO-3P |
326 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
IXYS/艾赛斯 |
23+ |
TO-3P |
5320 |
公司只做原装正品 |
询价 | ||
IXYS/艾赛斯 |
23+ |
TO-3P |
50000 |
全新原装正品现货,支持订货 |
询价 |
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