bipolar-transistors

•BVCEO > -45V\n•ICM = -200mA Peak Pulse Current;

Diodes

美台半导体

PNP SMALL SIGNAL TRANSISTOR IN SOT23

文件：433.82 Kbytes 页数：7 Pages

DIODES

美台半导体

Package：TO-236-3，SC-59，SOT-23-3；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 45V 0.1A SOT23-3

DIODES

美台半导体

NPN SILICON RF POWER TRANSISTOR

The RF Line NPN Silicon RF Power Transistor Designed for 24 Volt UHF large–signal, common emitter, class A linear amplifier applications in industrial and commercial equipment operating in the range of 800–960 MHz. • Specified for VCE = 24 Vdc, IC = 0.3 Adc Characteristics Output Power = 2.

文件：103.23 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

Integrated Circuit Low-Noise JFET-Input Operational Amplifier

Description: The NTE857M and NTE857SM are low–noise JFET input operational amplifiers combining two state–of–the–art linear technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for low input of

文件：28.14 Kbytes 页数：3 Pages

NTE

Integrated Circuit Low-Noise JFET-Input Operational Amplifier

Description: The NTE857M and NTE857SM are low–noise JFET input operational amplifiers combining two state–of–the–art linear technologies on a single monolithic integrated circuit. Each internally compensated operational amplifier has well matched high voltage JFET input devices for low input of

文件：28.14 Kbytes 页数：3 Pages

NTE