BC817-25QC

Marking：9N；Package：SOT8009；45 V, 500 mA NPN general-purpose transistors

Featuresandbenefits •Highpowerdissipationcapability •Highcurrent •Threecurrentgainselections •SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint •SmallerfootprintcomparedtoconventionalleadedSMDpackages •Lowpackageheightof0.5mm •AEC-Q101qualified

BC817-25QC-Q

Marking：9N；Package：SOT8009；45 V, 500 mA NPN general-purpose transistors

Featuresandbenefits •Highpowerdissipationcapability •Highcurrent •Threecurrentgainselections •SuitableforAutomaticOpticalInspection(AOI)ofsolderjoint •SmallerfootprintcomparedtoconventionalleadedSMDpackages •Lowpackageheightof0.5mm •Qualifiedaccordingto

CMDZ2L2

Marking：9N；Package：SOD-323；SUPERmini LOW LEVEL ZENER DIODE 250mW, 1.8 VOLTS THRU 47 VOLTS

DESCRIPTION: TheCENTRALSEMICONDUCTORCMDZ1L8SeriesSiliconLowLevelZenerDiodeisahighqualityvoltageregulator,manufacturedinaSUPERmini™surfacemountpackage,designedforapplicationsrequiringalowoperatingcurrent,lowleakage,andasharpknee. MARKINGCODE:SEEMARKINGCODES

CMDZ2L2

Marking：9N；Package：SOD-323；SURFACE MOUNT SILICON LOW LEVEL ZENER DIODE

DESCRIPTION: TheCENTRALSEMICONDUCTORCMDZ1L8SeriesSiliconLowLevelZenerDiodeisahighqualityvoltageregulator,manufacturedinaSUPERmini™surfacemountpackage,designedforapplicationsrequiringalowoperatingcurrent,lowleakage,andasharpknee. MARKINGCODE:SEEMARKINGCODES

D30V0S1U3LP20-7

Marking：9N；Package：U-DFN2020-3；1 CHANNEL HIGH SURGE TVS DIODE

Features ProvidesESDProtectionperIEC61000-4-2Standard: Air±30kV,Contact±30kV OneChannelofESDProtection LowChannelInputCapacitance TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplications

PLVA2662A

Marking：9N；Package：SOT23；Low-voltage avalanche regulator double diodes

FEATURES •Verylowdynamicimpedanceatlowcurrents:approximately1⁄20ofconventionalseries •Hardbreakdownknee •Lownoise:approximately1⁄10ofconventionalseries •Totalpowerdissipation:max.250mW •SmalltolerancesofVZ •Workingvoltagerange:nom.5.0to6.8V •Non-repetitive

PLVA2662A

Marking：9N；Package：SOT23；Low-voltage avalanche regulator double diodes

FEATURES •Verylowdynamicimpedanceatlowcurrents:approximately1⁄20ofconventionalseries •Hardbreakdownknee •Lownoise:approximately1⁄10ofconventionalseries •Totalpowerdissipation:max.250mW •SmalltolerancesofVZ •Workingvoltagerange:nom.5.0to6.8V •Non-repetitive

CMDZ2L2

Marking：9N；Package：SOD-323；SURFACE MOUNT SILICON LOW LEVEL ZENER DIODE 250mW, 1.8 THRU 47 VOLTS 짹5 TOLERANCE

SN74AUP1G79DPWR

Marking：9N；Package：X2SON；SN74AUP1G79 Low-Power Single Positive-Edge-Triggered D-Type Flip-Flop

STD9N60M6

Marking：9N60M6；Package：DPAK；N‑channel 600 V 670 mΩ typ., 6 A MDmesh M6 Power MOSFET in a DPAK package

Features •Reducedswitchinglosses •LowerRDS(on)perareavspreviousgeneration •Lowgateinputresistance •100avalanchetested •Zener-protected Applications •Switchingapplications •LLCconverters,resonantconverters •BoostPFCconverters Description ThenewMDmeshM6t