丝印：9N60M6；Package：DPAK；N‑channel 600 V 670 mΩ typ., 6 A MDmesh M6 Power MOSFET in a DPAK package

Features • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100 avalanche tested • Zener-protected Applications • Switching applications • LLC converters, resonant converters • Boost PFC converters Description The new MDmesh M6 t

文件：328.48 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V, 670 mOhm typ., 6 A MDmesh M6 Power MOSFET in a DPAK package

The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one • Reduced switching losses \n• Lower RDS(on) per area vs previous generation \n• Low gate input resistance \n• 100% avalanche tested \n• Zener-protected;

ST

意法半导体

ST
TO-252

ST

上传：深圳市轩嘉盛电子有限公司

NDK

NDK

金属工业

上传：天津市博通航睿技术有限公司

ST
BGA-81

ST

上传：深圳市科恒伟业电子有限公司