STD9N80K5

Marking：9N80K5；Package：DPAK；N-channel 800 V, 0.73 Ω typ., 7 A MDmesh™ K5 Power MOSFET in a DPAK package

Features •Industry’slowestRDS(on)xarea •Industry’sbestfigureofmerit(FoM) •Ultra-lowgatecharge •100avalanchetested •Zener-protected Applications •Switchingapplications Description ThisveryhighvoltageN-channelPowerMOSFETisdesignedusingMDmesh™K5 technology

STF9N60M2

Marking：9N60M2；Package：TO-220FP；N-channel 600 V, 0.72 ??typ., 5.5 A MDmesh II Plus??low Qg Power MOSFETs in TO-220FP and I2PAKFP packages

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusinganewgenerationofMDmesh™technology:MDmeshIIPlus™lowQg.TheserevolutionaryPowerMOSFETsassociateaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.They

STFI9N60M2

Marking：9N60M2；Package：I2PAKFP；N-channel 600 V, 0.72 ??typ., 5.5 A MDmesh II Plus??low Qg Power MOSFETs in TO-220FP and I2PAKFP packages

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusinganewgenerationofMDmesh™technology:MDmeshIIPlus™lowQg.TheserevolutionaryPowerMOSFETsassociateaverticalstructuretothecompanysstriplayouttoyieldoneoftheworldsloweston-resistanceandgatecharge.They

STL9N60M2

Marking：9N60M2；Package：PowerFLAT5x6HV；N-channel 600 V, 0.76 ??typ., 4.8 A MDmesh II Plus??low Qg Power MOSFET in a PowerFLAT??5x6 HV package

Description ThisdeviceisanN-channelPowerMOSFET developedusinganewgenerationofMDmesh™ technology:MDmeshIIPlus™lowQg.This revolutionaryPowerMOSFETassociatesa verticalstructuretothecompany'sstriplayoutto yieldoneoftheworld'sloweston-resistanceand gatecharge

STP9N80K5

Marking：9N80K5；Package：TO-220；N-channel 800 V, 0.73 Ω typ., 7 A MDmesh™ K5 Power MOSFETs in a TO-220 and TO-247 packages

Features Industry’slowestRDS(on)xarea Industry’sbestFoM(figureofmerit) Ultra-lowgatecharge 100avalanchetested Zener-protected Applications Switchingapplications Description TheseveryhighvoltageN-channelPower MOSFETaredesignedusingMDmesh™K5 technol

STW9N150

Marking：9N150；Package：TO-247；N-channel 1500 V - 1.8 Ω - 8 A - TO-247 very high voltage PowerMESH™ Power MOSFET

Features ■100%avalanchetested ■Avalancheruggedness ■Gatechargeminimized ■Verylowintrinsiccapacitances ■Highspeedswitching ■Verylowon-resistance Application ■Switchingapplications Description UsingthewellconsolidatedhighvoltageMESH OVERLAY™process,STMi

STW9N80K5

Marking：9N80K5；Package：TO-247；N-channel 800 V, 0.73 Ω typ., 7 A MDmesh™ K5 Power MOSFETs in a TO-220 and TO-247 packages

Features Industry’slowestRDS(on)xarea Industry’sbestFoM(figureofmerit) Ultra-lowgatecharge 100avalanchetested Zener-protected Applications Switchingapplications Description TheseveryhighvoltageN-channelPower MOSFETaredesignedusingMDmesh™K5 technol

9NE90

Marking：9NE90；Package：TO-220C；9A 900V N-channel Enhancement Mode Power MOSFET

9NE90

Marking：9NE90；Package：TO-220C；9A 900V N-channel Enhancement Mode Power MOSFET

9NE90

Marking：9NE90；Package：TO-200C；9A 900V N-channel Enhancement Mode Power MOSFET