MOSFET ??Power, Dual N-Channel 40 V, 8.1 m, 49 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD5C466NWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

文件：233.11 Kbytes 页数：7 Pages

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Power MOSFET 80 V, 25.5 m, 25 A, Dual N?묬hannel

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD6H852NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free an

文件：221.87 Kbytes 页数：7 Pages

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安森美半导体

MOSFET ??Power, Dual N-Channel 60 V, 6.5 m, 68 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD5C668NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free an

文件：230.69 Kbytes 页数：7 Pages

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安森美半导体

Power MOSFET 40 V, 17.0 m, 27 A, Dual N?묬hannel

Features • Small Footprint (5 x 6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVMFD5C478NWF − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：220.92 Kbytes 页数：7 Pages

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安森美半导体

Power MOSFET 40 V, 14.5 m, 29 A, Dual N?묬hannel

Features • Small Footprint (5 x 6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • NVMFD5C478NLWF − Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：179.95 Kbytes 页数：7 Pages

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安森美半导体

MOSFET ??Power, Dual N-Channel 60 V, 4.2 m, 111 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD5C650NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free an

文件：233.21 Kbytes 页数：7 Pages

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安森美半导体

Switch-mode Power Rectifier

This ultrafast rectifier in the dual flag SO−8 flat lead package offers designers a unique degree of versatility and design freedom. The two devices are electrically independent and can be used separately, as common cathode, as common anode or in series as a function of board level layout. The

文件：212.52 Kbytes 页数：6 Pages

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安森美半导体

Switch-Mode Power Rectifier

This ultrafast rectifier in the dual flag SO−8 flat lead package offers designers a unique degree of versatility and design freedom. The two devices are electrically independent and can be used separately, as common cathode, as common anode or in series as a function of board level layout. The

文件：191.51 Kbytes 页数：6 Pages

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安森美半导体

Switch-Mode Power Rectifier

This ultrafast rectifier in the dual flag SO−8 flat lead package offers designers a unique degree of versatility and design freedom. The two devices are electrically independent and can be used separately, as common cathode, as common anode or in series as a function of board level layout. The

文件：191.46 Kbytes 页数：6 Pages

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安森美半导体

MOSFET - Power, Dual N-Channel, DUAL SO8FL 60 V, 20.3 m, 27 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFWD020N06C − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Hal

文件：254.21 Kbytes 页数：7 Pages

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安森美半导体