Power MOSFET 40 V, 2.9 m, 127 A, Dual N?묬hannel

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD5C446NWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

文件：293.18 Kbytes 页数：7 Pages

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安森美半导体

MOSFET ??Power, Dual N-Channel 60 V, 11.9 m, 40 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD5C672NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free an

文件：231.22 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET ??Power, Dual N-Channel 40 V, 2.65 m, 145 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD5C446NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free an

文件：233.79 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET ??Power, Dual N-Channel 60 V, 14.4 m, 42 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD5C674NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free an

文件：372.44 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET ??Power, Dual N-Channel 40 V, 5.4 m, 70 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD5C462NWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and

文件：231.09 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET ??Power, Dual N-Channel 60 V, 28 m, 26 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD5C680NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free an

文件：364.89 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET ??Power, Dual N-Channel 40 V, 4.7 m, 84 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD5C462NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free an

文件：231.76 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Power MOSFET 80 V, 6.9 m, 74 A, Dual N?묬hannel

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD6H840NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free an

文件：253.76 Kbytes 页数：8 Pages

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安森美半导体

MOSFET ??Power, Dual N-Channel 40 V, 11.5 m, 36 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD5C470NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free an

文件：230.87 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET ??Power, Dual N-Channel, SO-8FL 60 V, 22.6 m, 24 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFWD024N06C − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Hal

文件：255.85 Kbytes 页数：7 Pages

ONSEMI

安森美半导体