Surface Mount Schottky Power Rectifier

This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol

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安森美半导体

Surface Mount Schottky Power Rectifier

This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol

文件：196.09 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

Surface Mount Schottky Power Rectifier

This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and pol

文件：169.34 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Schottky Rectifier, Trench-based, Low Forward Voltage, Low Leakage

Features • Fine Lithography Trench−based Schottky Technology for Very Low Forward Voltage and Low Leakage • Fast Switching with Exceptional Temperature Stability • Low Power Loss and Lower Operating Temperature • Higher Efficiency for Achieving Regulatory Compliance • High Surge Capability

文件：225.85 Kbytes 页数：7 Pages

ONSEMI

安森美半导体