98AON55210E中文资料安森美半导体数据手册PDF规格书

This device employs the Schottky Barrier principle in a large area

metal−to−silicon power diode. State−of−the−art geometry features

epitaxial construction with oxide passivation and metal overlay

contact. Ideally suited for low voltage, high frequency rectification, or

as free wheeling and polarity protection diodes in surface mount

applications where compact size and weight are critical to the system.

特性 Features

• Low Profile Package for Space Constrained Applications

• Rectangular Package for Automated Handling

• Highly Stable Oxide Passivated Junction

• 150°C Operating Junction Temperature

• Guard−Ring for Stress Protection

• NRV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

• These are Pb−Free and Halide−Free Devices

Mechanical Charactersistics

• Case: Epoxy, Molded, Epoxy Meets UL 94, V−0

• Weight: 95 mg (approximately)

• Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

• Lead and Mounting Surface Temperature for Soldering Purposes:

260°C Max. for 10 Seconds

• Cathode Polarity Band

• Device Meets MSL 1 Requirements

• ESD Ratings: Machine Model = C

ESD Ratings: Human Body Model = 3B