MOSFET ??Power, Single N-Channel, D2PAK 650 V, 110 m, 30 A

Description SUPERFET® III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, pr

文件：242.93 Kbytes 页数：9 Pages

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MOSFET - Power, Single N-Channel, D2PAK 650 V, 150 m, 24 A

Description SUPERFET® III MOSFET is onsemi’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide supe

文件：230.26 Kbytes 页数：9 Pages

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MOSFET - Power 650 V, 190 m, 20 A, Single N-Channel, D2PAK

Description SUPERFET® III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, pr

文件：259.39 Kbytes 页数：9 Pages

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MOSFET - N-Channel SuperFET V, FRFET 600 V, 55 m, 45 A

Features • Ultra Low Gate Charge & Low Effective Output Capacitance • Lower FOM (RDS(on) max. x Qg typ. & RDS(on) max. x EOSS) • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：258.529 Kbytes 页数：7 Pages

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MOSFET - Power, N-Channel, Automotive SUPERFET III, Easy-Drive 650 V, 72 m, 44 A

Description SuperFET III MOSFET is onsemi’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss provide superi

文件：227.18 Kbytes 页数：8 Pages

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MOSFET - Power, Single N-Channel, D2PAK 650 V, 82 m, 40 A

Description SUPERFET® III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, pr

文件：242.11 Kbytes 页数：9 Pages

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IGBT for Automotive Applications 650 V, 30 A

Using novel field stop IGBT technology, onsemi’s new series of FS4 IGBTs offer the optimum performance for automotive applications. This technology is Short circuit rated and offers high figure of merit with low conduction and switching losses. Features • Maximum Junction Temperature: TJ = 17

文件：248.39 Kbytes 页数：10 Pages

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IGBT for Automotive Applications 650 V, 40 A

Using novel field stop IGBT technology, onsemi’s new series of FS4 IGBTs offer the optimum performance for automotive applications. This technology is Short circuit rated and offers high figure of merit with low conduction and switching losses. Features • Maximum Junction Temperature: TJ = 17

文件：248.65 Kbytes 页数：10 Pages

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IGBT - Field Stop, Trench 650 V, 40 A

General Description Using the novel field stop 3rd generation IGBT technology, FGH40T65SPD−F085 offers the optimum performance with both low conduction loss and switching loss for a high efficiency operation in various applications, while provides 50 V higher blocking voltage and rugged high

文件：2.02757 Mbytes 页数：10 Pages

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ECOSPARK Ignition IGBT 300 mJ, 400 V, N−Channel Ignition IGBT

General Description The ISL9V3040D3S, ISL9V3040S3S, and ISL9V3040P3 are the next generation ignition IGBTs that offer outstanding SCIS capability in the space saving D−Pak (TO−252), as well as the industry standard D2−Pak (TO−263), and TO−262 and TO−220 plastic packages. This device is intend

文件：3.91689 Mbytes 页数：12 Pages

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