98AON56370E中文资料安森美半导体数据手册PDF规格书

厂商型号	98AON56370E
功能描述	MOSFET - Power, N-Channel, Automotive SUPERFET III, Easy-Drive 650 V, 72 m, 44 A
文件大小	227.18 Kbytes
页面数量	8 页
生产厂商	ONSEMI
中文名称	安森美半导体
网址	网址
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-11-3 20:00:00
人工找货	98AON56370E价格和库存，欢迎联系客服免费人工找货

描述 Description

SuperFET III MOSFET is onsemi’s brand−new high voltage

super−junction (SJ) MOSFET family that is utilizing charge balance

technology for outstanding low on−resistance and lower gate charge

performance. This advanced technology is tailored to minimize

conduction loss provide superior switching performance, and with−

stand extreme dv/dt rate. Consequently, SuperFET III MOSFET

Easy−drive series helps manage EMI issues and allows for easier

design implementation.

特性 Features

• AEC−Q101 Qualified

• Max Junction Temperature 150°C

• Typ. RDS(on) = 61 mΩ

• Ultra Low Gate Charge (Typ. QG = 82 nC)

• Low Effective Output Capacitance (Typ. COSS(eff.) = 724 pF)

• 100 Avalanche Tested

• These Devices are Pb−Free and are RoHS Compliant

Typical Applications

• Automotive PHEV−BEV DC−DC Converter

• Automotive Onboard Charger for PHEV−BEV