98AON56370E中文资料安森美半导体数据手册PDF规格书

General Description

Using the novel field stop 3rd generation IGBT technology,

FGH40T65SPD−F085 offers the optimum performance with both low

conduction loss and switching loss for a high efficiency operation in

various applications, while provides 50 V higher blocking voltage and

rugged high current switching reliability. Meanwhile, this part also

offers and advantage of outstanding performance in parallel operation.

特性 Features

• Low Saturation Voltage: VCE(sat) = 2.0 V (Typ.) @ IC = 40 A

• 100% of the Parts are Dynamically Tested *

• Short Circuit Ruggedness > 5 s @ 25°C

• Maximum Junction Temperature : TJ = 175°C

• Fast Switching

• Tight Parameter Distribution

• Positive Temperature Coefficient for Easy Parallel Operation

• Copacked with Soft, Fast Recovery Diode

• AEC−Q101 Qualified and PPAP Capable

• This Device is Pb−Free and are RoHS Compliant

* VCC = 400 V, VGE = 15 V, IC = 120 A, RG = 20 , Inductive Load

Applications

• Onboard Charger

• AirCon Compressor

• PTC Heater

• Motor Drivers

• Other Automotive Power−train and Auxiliary Applications