MOSFET ??Power, N-Channel, SUPERFET III, Easy Drive 650 V, 30 A, 99 m

Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, pro

文件：328.06 Kbytes 页数：10 Pages

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ECOSPARK Ignition IGBT 500 mJ, 360 V, N−Channel Ignition IGBT

General Description The ISL9V5036S3ST, ISL9V5036S3ST−F085C and ISL9V5036P3−F085 are the next generation IGBTs that offer outstanding SCIS capability in the D2−Pak (TO−263) and TO−220 plastic package. These devices are intended for use in automotive ignition circuits, specifically as coil driv

文件：325.34 Kbytes 页数：11 Pages

ONSEMI

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ECOSPARK2 320 mJ, 450 V, N-Channel Ignition IGBT

General Description The FGB3245G2−F085 and FGD3245G2 are N−channel IGBTs designed in onsemi’s ECOSPARK−2 technology which helps in eliminating external protection circuitry. The technology is optimized for driving the coil in the harsh environment of automotive ignition systems and offers out

文件：344.15 Kbytes 页数：10 Pages

ONSEMI

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ECOSPARK Ignition IGBT 300 mJ, 400 V, N−Channel Ignition IGBT

Features • SCIS Energy = 300 mJ at TJ = 25°C • Logic Level Gate Drive • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant Applications • Automotive Ignition Coil Driver Circuits • High Current Ignition System • Coil on Plug Application

文件：2.37105 Mbytes 页数：11 Pages

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IGBT for Automotive Applications, 650 V, 40 A, D2PAK

Features  Maximum Junction Temperature: TJ = 175C  High Speed Switching Series  VCE(sat) = 1.6 V (Typ.) @ IC = 40 A  100% of the Part are Dynamically Tested (Note 1)  AEC−Q101 Qualified  These Devices are Pb−Free and are RoHS Compliant Typical Applications  Automotive On Board

文件：310.98 Kbytes 页数：10 Pages

ONSEMI

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MOSFET ??N?륝hannel, SUPERFET III, FRFET 650 V, 36 A, 95 m

文件：344.78 Kbytes 页数：10 Pages

ONSEMI

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MOSFET ??N?륝hannel, SUPERFET III, FRFET 650 V, 30 A, 110 m

文件：474.53 Kbytes 页数：10 Pages

ONSEMI

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MOSFET ??N?륝hannel, SUPERFET III, FRFET 650 V, 20 A, 190 m

文件：400.51 Kbytes 页数：10 Pages

ONSEMI

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N?륝hannel PowerTrench MOSFET 60 V, 110 A, 2.7 m

文件：247.46 Kbytes 页数：7 Pages

ONSEMI

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EcoSPARK Ignition IGBT

文件：3.12145 Mbytes 页数：9 Pages

ONSEMI

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