98AON56370E中文资料安森美半导体数据手册PDF规格书

厂商型号	98AON56370E
功能描述	MOSFET - Power, Single N-Channel, D2PAK 650 V, 82 m, 40 A
文件大小	242.11 Kbytes
页面数量	9 页
生产厂商	ONSEMI
中文名称	安森美半导体
网址	网址
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-11-3 20:00:00
人工找货	98AON56370E价格和库存，欢迎联系客服免费人工找货

描述 Description

SUPERFET® III MOSFET is ON Semiconductor’s brand−new high

voltage super−junction (SJ) MOSFET family that is utilizing charge

balance technology for outstanding low on−resistance and lower gate

charge performance. This advanced technology is tailored to minimize

conduction loss, provide superior switching performance, and

withstand extreme dv/dt rate.

Consequently, SUPERFET III MOSFET is very suitable for the

various power system for miniaturization and higher efficiency.

SUPERFET III FRFET® MOSFET’s optimized reverse recovery

performance of body diode can remove additional component and

improve system reliability.

特性 Features

• 700 V @ TJ = 150°C

• Typ. RDS(on) = 64 m

• Ultra Low Gate Charge (Typ. Qg = 81 nC)

• Low Effective Output Capacitance (Typ. Coss(eff.) = 722 pF)

• 100 Avalanche Tested

• Qualified with AEC−Q101

• These Devices are Pb−Free and are RoHS Compliant

Typical Applications

• Automotive On Board Charger

• Automotive DC/DC Converter for HEV