N-Channel JFET ??5 V, 20 to 40 mA, 40 mS, Dual

The NSVJ6904DSB6 is a composite type of JFET designed for compact size and high efficiency which can achieve high gain performance. This AEC−Q101 qualified and PPAP capable device is suited for automotive applications. Features • Large | yfs | • Small Ciss • Ultralow Noise Figure • CPH6

文件：236.35 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Shottky Barrier Diode, Low VF, Single CPH6 30 V, 3.0 A

Features • Small Switching Noise • Low Forward Voltage (IF = 3 A, VF Max = 0.42 V) • Ultra−small Package Permitting Applied Sets to be Small and Slim • Halogen Free Compliance • These are Pb−Free Devices Applications • High Frequency Rectification (Switching Regulators, Converters, Chopper

文件：150.65 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

RF Transistor 12 V, 100 mA, fT = 6.7 GHz, NPN Single

文件：873.32 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

BGA

MARVELL

美满

上传：深圳市鹏兴电子有限公司

MARVELL

美满

上传：深圳市一线半导体有限公司