Silicon Carbide (SiC) Module – EliteSiC, 40 mohm SiC M1 MOSFET, 1200 V 40 A, 1200 V SiC Diode, Two Channel Full SiC Boost, Q0 Package

Description The NXH40B120MNQ0SNG is a power module containing a dual boost stage. The integrated SiC MOSFETs and SiC Diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability. Features • 1200 V, 40 m SiC MOSFETs •

文件：645.25 Kbytes 页数：13 Pages

ONSEMI

安森美半导体

Silicon Carbide (SiC) Module – EliteSiC, 80 mohm SiC M1 MOSFET, 1200 V 20 A, 1200 V SiC Diode, Two Channel Full SiC Boost, Q0 Package

The NXH80B120MNQ0SNG is a power module containing a dual boost stage. The integrated SiC MOSFETs and SiC Diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability. Features • 1200 V 80 m SiC MOSFETs • Low Reverse Re

文件：679.76 Kbytes 页数：13 Pages

ONSEMI

安森美半导体

Dual Boost Power Module

The NXH100B120H3Q0 is a power module containing a dual boost stage. The integrated field stop trench IGBTs and SiC Diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability. Features • 1200 V Ultra Field Stop IGBTs •

文件：1.5026 Mbytes 页数：16 Pages

ONSEMI

安森美半导体

BGA

MARVELL

美满

上传：深圳市鹏兴电子有限公司

MARVELL

美满

上传：深圳市一线半导体有限公司