98AON63481G中文资料安森美半导体数据手册PDF规格书

The NXH100B120H3Q0 is a power module containing a dual boost

stage. The integrated field stop trench IGBTs and SiC Diodes provide

lower conduction losses and switching losses, enabling designers to

achieve high efficiency and superior reliability.

特性 Features

• 1200 V Ultra Field Stop IGBTs

• Low Reverse Recovery and Fast Switching SiC Diodes

• 1600 V Bypass and Anti−parallel Diodes

• Low Inductive Layout

• Solderable Pins or Press−Fit Pins

• Thermistor

• Options with Pre−Applied Thermal Interface Material (TIM) and

Without Pre−Applied TIM

Typical Applications

• Solar Inverter

• Uninterruptible Power Supplies

• Energy Storage Systems