Silicon Carbide (SiC) MOSFET - EliteSiC, 44mohm, 650V, M2, TOLL

Features • Typ. RDS(on) = 44 m @ VGS = 18 V Typ. RDS(on) = 60 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 74 nC) • High Speed Switching with Low Capacitance (Coss = 133 pF) • 100% Avalanche Tested • TJ = 175°C • RoHS Compliant Typical Applications • SMPS (Switching Mode Power

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安森美半导体

Silicon Carbide (SiC) MOSFET - EliteSiC, 56mohm, 650V, M2, TOLL

Features • Typ. RDS(on) = 56 m @ VGS = 18 V Typ. RDS(on) = 75 m @ VGS = 15 V • Ultra Low Gate Charge (QG(tot) = 59 nC) • Low Effective Output Capacitance (Coss = 109 pF) • 100% Avalanche Tested • TJ = 175°C • RoHS Compliant Typical Applications • SMPS (Switching Mode Power Supplies)

文件：462.64 Kbytes 页数：8 Pages

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安森美半导体

Silicon Carbide (SiC) MOSFET – EliteSiC, 23 mohm, 650V, M3S, TOLL

Features • Typical RDS(on) = 23 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 69 nC) • High Speed Switching with Low Capacitance (Coss = 152 pF) • 100% Avalanche Tested • This Device is Halide Free and RoHS Compliant with Exemption 7a, Pb−Free 2LI (on second level interconnection)

文件：583.3 Kbytes 页数：10 Pages

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安森美半导体

Silicon Carbide (SiC) MOSFET – EliteSiC, 32 mohm, 650V, M3S, TOLL

Features • Typical RDS(on) = 32 m @ VGS = 18 V • Ultra Low Gate Charge (QG(tot) = 55 nC) • High Speed Switching with Low Capacitance (Coss = 113 pF) • 100% Avalanche Tested • This Device is Halide Free and RoHS Compliant with Exemption 7a, Pb−Free 2LI (on second level interconnection)

文件：589.22 Kbytes 页数：12 Pages

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安森美半导体