MOSFET ??Power, Dual N-Channel 40 V, 7.4 m, 52 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFD5C466NLWF − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free an

文件：232.96 Kbytes 页数：7 Pages

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MOSFET ??Power, Dual N-Channel 100 V, 39 m, 21 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • NVMFWD040N10MCL − Wettable Flank Products • These Devices are Pb−Free, Halogen Free/BFR Free, Berylliu

文件：218.66 Kbytes 页数：7 Pages

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MOSFET - Power, Dual N-Channel, DUAL SO8FL 60 V, 20.3 m, 27 A

文件：251.31 Kbytes 页数：7 Pages

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MOSFET - Power, Dual N-Channel, DUAL SO8FL 60 V, 29.7 m, 19 A

文件：252.45 Kbytes 页数：7 Pages

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MOSFET ??Power, Dual, N-Channel, Logic Level, Dual SO8FL 60 V, 39 m, 17 A

文件：224.1 Kbytes 页数：8 Pages

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MOSFET ??Power, Dual, N-Channel 40 V, 2.65 m, 145 A

文件：231.85 Kbytes 页数：7 Pages

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Power MOSFET 40 V, 8.1 m, 49 A, Dual N?묬hannel

文件：218.79 Kbytes 页数：7 Pages

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MOSFET ??Power, Dual, N-Channel 40 V, 7.4 m, 52 A

文件：231.12 Kbytes 页数：7 Pages

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MOSFET ??Dual, N-Channel 60 V, 14.4 m, 42 A

文件：369.87 Kbytes 页数：7 Pages

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MOSFET ??Power, Dual, N-Channel 60 V, 28 m, 26 A

文件：362.88 Kbytes 页数：7 Pages

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