7A, 650V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 7N65A is a high voltage N-Channel enhancement mode power field effect transistors designed to have minimize on-state resistance, superior switching performance and withstand high energy pulse in the avalanche and commutation mode. This power MOSFET is well suited for high effi

文件：283.57 Kbytes 页数：7 Pages

UTC

友顺

7A, 650V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 7N65A is a high voltage N-Channel enhancement mode power field effect transistors designed to have minimize on-state resistance, superior switching performance and withstand high energy pulse in the avalanche and commutation mode. This power MOSFET is well suited for high effi

文件：283.57 Kbytes 页数：7 Pages

UTC

友顺

7A, 650V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 7N65A is a high voltage N-Channel enhancement mode power field effect transistors designed to have minimize on-state resistance, superior switching performance and withstand high energy pulse in the avalanche and commutation mode. This power MOSFET is well suited for high effi

文件：283.57 Kbytes 页数：7 Pages

UTC

友顺

N-Channel 650V (D-S) Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Server and telecom power supplies • Switch mode power supplies (SMPS) • Power factor correction

文件：1.10563 Mbytes 页数：10 Pages

VBSEMI

微碧半导体

7A, 650V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 7N65A is a high voltage N-Channel enhancement mode power field effect transistors designed to have minimize on-state resistance, superior switching performance and withstand high energy pulse in the avalanche and commutation mode. This power MOSFET is well suited for high effi

文件：283.57 Kbytes 页数：7 Pages

UTC

友顺

7A, 650V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 7N65A is a high voltage N-Channel enhancement mode power field effect transistors designed to have minimize on-state resistance, superior switching performance and withstand high energy pulse in the avalanche and commutation mode. This power MOSFET is well suited for high effi

文件：283.57 Kbytes 页数：7 Pages

UTC

友顺

7A mps,650 Volts N-CHANNEL MOSFET

FEATURE ● 7A,650V,RDS(ON)=1.4Ω @VGS=10V/3.5A ● Low gate charge ● Low Ciss ● Fast switching ● 100 avalanche tested ● Improved dv/dt capability

文件：194.24 Kbytes 页数：2 Pages

CHONGQING

平伟实业

650V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：886.6 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

N-CHANNEL POWER MOSFET

Features ● RDS(ON)

文件：2.85034 Mbytes 页数：9 Pages

SUNMATE

森美特

N-CHANNEL POWER MOSFET

Features ● RDS(ON)

文件：2.85034 Mbytes 页数：9 Pages

SUNMATE

森美特