7 Amps, 650 Volts 7 Amps, 650 Volts

DESCRIPTION The UTC 7N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in

文件：150.93 Kbytes 页数：8 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

Features ● RDS(ON)

文件：2.85034 Mbytes 页数：9 Pages

SUNMATE

森美特

7A mps,650 Volts N-CHANNEL MOSFET

FEATURE ● 7A,650V,RDS(ON)=1.4Ω @VGS=10V/3.5A ● Low gate charge ● Low Ciss ● Fast switching ● 100 avalanche tested ● Improved dv/dt capability

文件：194.24 Kbytes 页数：2 Pages

CHONGQING

平伟实业

Drain Current ID= 7A@ TC=25C

• FEATURES • Drain Current ID= 7A@ TC=25℃ • Drain Source Voltage : VDSS= 650V(Min) • Static Drain-Source On-Resistance : RDS(on) = 1.35Ω (Max) @VGS = 10 V • Avalanche Energy Specified • Fast Switching • APPLICATIONS • High speed switching applications in power supplies • PWM

文件：137.09 Kbytes 页数：2 Pages

ISC

无锡固电

650V N-Channel Power MOSFET

Features RDS(ON)

文件：1.98642 Mbytes 页数：8 Pages

SY

顺烨电子

丝印：7N65AD；Package：TO-252；650V N-Channel Planar MOSFET

Features Ultra Low gate Charge Low Crss Fast switching capability

文件：4.74962 Mbytes 页数：9 Pages

SY

顺烨电子

N-Channel 650V (D-S) Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Server and telecom power supplies • Switch mode power supplies (SMPS) • Power factor correction

文件：1.15512 Mbytes 页数：11 Pages

VBSEMI

微碧半导体

N-CHANNEL POWER MOSFET

■ DESCRIPTION 7N60 7N65 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switch

文件：618.55 Kbytes 页数：7 Pages

ZSELEC

淄博圣诺

650V N-Channel Power MOSFET

Features ● RDS(ON)

文件：2.22764 Mbytes 页数：9 Pages

DYELEC

迪一电子

N-channel power MOS tube

Features * VDS (V)=650V * RDS(ON)

文件：692.23 Kbytes 页数：11 Pages

UMW

友台半导体