丝印：7N65AD；Package：TO-252；650V N-Channel Planar MOSFET

Features Ultra Low gate Charge Low Crss Fast switching capability

文件：4.74962 Mbytes 页数：9 Pages

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丝印：7N65AD；Package：TO-252；7A 650V N-channel enhancement mode field effect transistor

7A 650V N-channel enhancement mode field effect transistor Performance characteristics: ♦ Fast switching speed ♦ Low on-resistance ♦ Low reverse transfer capacitance ♦ Low gate charge ♦ 100 single pulse avalanche energy test ♦ Improved dv/dt capability

文件：1.08437 Mbytes 页数：7 Pages

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