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SVF7N65RDTR

丝印:7N65RD;Package:TO-252-2L;7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

文件:382.47 Kbytes 页数:10 Pages

SILAN

士兰微

SVF7N65RDTR

丝印:7N65RD;Package:TO-252-2L;7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

文件:382.46 Kbytes 页数:10 Pages

SILAN

士兰微

SVF7N65RDTR

丝印:7N65RD;Package:TO-252-2L;7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

文件:382.46 Kbytes 页数:10 Pages

SILAN

士兰微

SVF7N65RDTR

丝印:7N65RD;Package:TO-252-2L;7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

文件:382.47 Kbytes 页数:10 Pages

SILAN

士兰微

SVF7N65RDTR

丝印:7N65RD;Package:TO-252-2L;7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

文件:382.46 Kbytes 页数:10 Pages

SILAN

士兰微

SVF7N65RDTR

丝印:7N65RD;Package:TO-252-2L;7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

文件:373.55 Kbytes 页数:10 Pages

SILAN

士兰微

SVF7N65RDTR

丝印:7N65RD;Package:TO-252-2L;7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

文件:373.56 Kbytes 页数:10 Pages

SILAN

士兰微

SVF7N65RDTR

丝印:7N65RD;Package:TO-252-2L;7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

文件:373.55 Kbytes 页数:10 Pages

SILAN

士兰微

7N65RD

7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

文件:373.55 Kbytes 页数:10 Pages

SILAN

士兰微

供应商型号品牌批号封装库存备注价格
SILAN/士兰微
24+
TO-252
196000
专营SILAN士兰微原装保障
询价
SILAN/士兰微
21+
SOP
160
询价
SILAN/士兰微
23+
TO-252
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
Silan/士兰微
21+
TO-252
25000
保证原装正品,需要直接联系张小姐,13544103396
询价
SILAN/士兰微
22+
TO-252
100000
代理渠道/只做原装/可含税
询价
SILAN
25+
TO-252
12260
询价
SILAN/士兰微
20+
TO-252
880000
明嘉莱只做原装正品现货
询价
SILAN
24+
TO-252
11000
假一赔百原装正品价格优势实单可谈
询价
SILAN
2024+
TO-252
500000
诚信服务,绝对原装原盘
询价
SILAN/士兰微
24+
TO-252
60000
全新原装现货
询价
更多7N65RD供应商 更新时间2025-9-14 9:36:00