| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Marking：7N65RMJ；Package：TO-251J-3L；7A, 650V N-CHANNEL MOSFET GENERALDESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMstructureVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistance, | SILANSilan Microelectronics Joint-stock 士兰微杭州士兰微电子股份有限公司 | SILAN | ||
Marking：7N65RMJ；Package：TO-251J-3L；7A, 650V N-CHANNEL MOSFET GENERALDESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMstructureVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistance, | SILANSilan Microelectronics Joint-stock 士兰微杭州士兰微电子股份有限公司 | SILAN | ||
Marking：7N65RMJ；Package：TO-251J-3L；7A, 650V N-CHANNEL MOSFET GENERALDESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMstructureVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistance, | SILANSilan Microelectronics Joint-stock 士兰微杭州士兰微电子股份有限公司 | SILAN | ||
Marking：7N65RMJ；Package：TO-251J-3L；7A, 650V N-CHANNEL MOSFET GENERALDESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMstructureVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistance, | SILANSilan Microelectronics Joint-stock 士兰微杭州士兰微电子股份有限公司 | SILAN | ||
Marking：7N65RMJ；Package：TO-251J-3L；7A, 650V N-CHANNEL MOSFET GENERALDESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMstructureVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistance, | SILANSilan Microelectronics Joint-stock 士兰微杭州士兰微电子股份有限公司 | SILAN | ||
Marking：7N65RMJ；Package：TO-251J-3L；7A, 650V N-CHANNEL MOSFET GENERALDESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMstructureVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistance, | SILANSilan Microelectronics Joint-stock 士兰微杭州士兰微电子股份有限公司 | SILAN | ||
Marking：7N65RMJ；Package：TO-251J-3L；7A, 650V N-CHANNEL MOSFET GENERALDESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMstructureVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistance, | SILANSilan Microelectronics Joint-stock 士兰微杭州士兰微电子股份有限公司 | SILAN | ||
Marking：7N65RMJ；Package：TO-251J-3L；7A, 650V N-CHANNEL MOSFET GENERALDESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T)isanN-channelenhancementmode powerMOSfieldeffecttransistorwhichisproducedusingSilan proprietaryF-CellTMstructureVDMOStechnology.Theimproved processandcellstructurehavebeenespeciallytailoredtominimize on-stateresistance, | SILANSilan Microelectronics Joint-stock 士兰微杭州士兰微电子股份有限公司 | SILAN |
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