丝印：7N65RMJ；Package：TO-251J-3L；7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

文件：373.55 Kbytes 页数：10 Pages

SILAN

士兰微

丝印：7N65RMJ；Package：TO-251J-3L；7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

文件：373.56 Kbytes 页数：10 Pages

SILAN

士兰微

丝印：7N65RMJ；Package：TO-251J-3L；7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

文件：373.55 Kbytes 页数：10 Pages

SILAN

士兰微

丝印：7N65RMJ；Package：TO-251J-3L；7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

文件：382.47 Kbytes 页数：10 Pages

SILAN

士兰微

丝印：7N65RMJ；Package：TO-251J-3L；7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

文件：382.46 Kbytes 页数：10 Pages

SILAN

士兰微

丝印：7N65RMJ；Package：TO-251J-3L；7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

文件：382.46 Kbytes 页数：10 Pages

SILAN

士兰微

丝印：7N65RMJ；Package：TO-251J-3L；7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

文件：382.47 Kbytes 页数：10 Pages

SILAN

士兰微

丝印：7N65RMJ；Package：TO-251J-3L；7A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance,

文件：382.46 Kbytes 页数：10 Pages

SILAN

士兰微

平面高压MOS功率管

SVF7N65RD(MJ)(FJH)(F)(T) N沟道增强型高压功率MOS场效应晶体管采用士兰微电子F-CellTM平面高压VDMOS 工艺技术制造。先进的工艺及元胞结构使得该产品具有较低的导通电阻、优越的开关性能及很高的雪崩击穿耐量。\n\n 该产品可广泛应用于AC-DC开关电源，DC-DC电源转换器，高压H桥PWM马达驱动。 • 7A，650V，RDS(on)(典型值)=1.2Ω@VGS=10V\n• 低栅极电荷量\n• 低反向传输电容\n• 开关速度快\n• 提升了dv/dt 能力;

Silan

士兰微