SVF7N65RMJ中文资料士兰微数据手册PDF规格书

厂商型号	SVF7N65RMJ
功能描述	7A, 650V N-CHANNEL MOSFET
丝印标识	7N65RMJ
封装外壳	TO-251J-3L
文件大小	382.46 Kbytes
页面数量	10 页
生产厂商	Silan Microelectronics Joint-stock
企业简称	SILAN【士兰微】
中文名称	杭州士兰微电子股份有限公司官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-6-29 14:32:00
人工找货	SVF7N65RMJ价格和库存，欢迎联系客服免费人工找货

GENERAL DESCRIPTION

SVF7N65RD(MJ)(FJH)(F)(T) is an N-channel enhancement mode

power MOS field effect transistor which is produced using Silan

proprietary F-CellTM structure VDMOS technology. The improved

process and cell structure have been especially tailored to minimize

on-state resistance, provide superior switching performance, and

withstand high energy pulse in the avalanche and commutation

mode.

These devices are widely used in AC-DC power supplies, DC-DC

converters and H-bridge PWM motor drivers.

FEATURES

 7A, 650V, RDS(on)(typ.)=1.2@VGS=10V

 Low gate charge

 Low Crss

 Fast switching

 Improved dv/dt capability