N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description 650V N-CHANNEL ENHANCEMENT MODE POWER MOSFET Features  RDS(ON) = 1.27Ω (Max.) @ VGS = 10V, ID = 3.5A  Fast switching  100 avalanche tested  Improved dv/dt capability Application  DC-DC & DC-AC Converters  Uninterruptible Power Supply (UPS)  Switch Mode Low Power Su

文件：1.3107 Mbytes 页数：6 Pages

TUOFENG

拓锋半导体

N-CHANNEL MOSFET

FEATURES RDS(ON) = 1.2Ω @VGS = 10 V Ultra low gate charge Low reverse transfer Capacitance Fast switching capability Avalanche energy tested Improved dv/dt capability, high ruggedness APPLICATIONS High efciency switch mode power supplies Electronic lamp ballasts based on half bridge L

文件：549.66 Kbytes 页数：7 Pages

EVVOSEMI

翊欧

7.4 Amps, 650 Volts N-CHANNEL POWER MOSFET

文件：180.91 Kbytes 页数：6 Pages

UTC

友顺

7.4A, 650V N-CHANNEL POWER MOSFET

文件：173.56 Kbytes 页数：6 Pages

UTC

友顺

7.4A, 650V   N-CHANNEL POWER MOSFET

The UTC 7N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching powe • RDS(ON) = 1.2Ω @VGS = 10 V   \n• Ultra low gate charge (typical 29 nC )   \n• Low reverse transfer Capacitance ( CRSS = typical 16pF ) \n• Fast switching capability \n• Avalanche energy tested \n• Improved dv/dt capability, high ruggedness;

UTC

友顺

650V N-Channel Planar MOSFET

Features Ultra Low gate Charge Low Crss Fast switching capability

文件：4.74962 Mbytes 页数：9 Pages

SY

顺烨电子

7A, 650V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 7N65A is a high voltage N-Channel enhancement mode power field effect transistors designed to have minimize on-state resistance, superior switching performance and withstand high energy pulse in the avalanche and commutation mode. This power MOSFET is well suited for high effi

文件：283.57 Kbytes 页数：7 Pages

UTC

友顺

7A 650V N-channel enhancement mode field effect transistor

7A 650V N-channel enhancement mode field effect transistor Performance characteristics: ♦ Fast switching speed ♦ Low on-resistance ♦ Low reverse transfer capacitance ♦ Low gate charge ♦ 100 single pulse avalanche energy test ♦ Improved dv/dt capability

文件：1.08437 Mbytes 页数：7 Pages

YFWDIODE

佑风微

7A, 650V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 7N65A is a high voltage N-Channel enhancement mode power field effect transistors designed to have minimize on-state resistance, superior switching performance and withstand high energy pulse in the avalanche and commutation mode. This power MOSFET is well suited for high effi

文件：283.57 Kbytes 页数：7 Pages

UTC

友顺

N-Channel 650V (D-S) Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Server and telecom power supplies • Switch mode power supplies (SMPS) • Power factor correction

文件：1.10565 Mbytes 页数：10 Pages

VBSEMI

微碧半导体