N-CHANNEL POWER MOSFET

Features ● RDS(ON)

文件：2.85034 Mbytes 页数：9 Pages

SUNMATE

森美特

7A mps,650 Volts N-CHANNEL MOSFET

FEATURE ● 7A,650V,RDS(ON)=1.4Ω @VGS=10V/3.5A ● Low gate charge ● Low Ciss ● Fast switching ● 100 avalanche tested ● Improved dv/dt capability

文件：194.24 Kbytes 页数：2 Pages

CHONGQING

平伟实业

N-channel power MOS tube

Features * VDS (V)=650V * RDS(ON)

文件：692.23 Kbytes 页数：11 Pages

UMW

友台半导体

650V N-Channel Enhancement Mode MOSFET

Description The AP7N65F/P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system mini

文件：4.24023 Mbytes 页数：5 Pages

EVVOSEMI

翊欧

7A, 650V SUPER JUNCTION MOS POWER TRANSISTOR

DESCRIPTION SVS7N65D(F)(MJ)(FJ)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power de

文件：281.13 Kbytes 页数：10 Pages

SILAN

士兰微

MOS管

ZG

中鑫半导体

丝印：7N65FJD2；Package：TO-220FJ-3L；7A, 650V SUPER JUNCTION MOS POWER TRANSISTOR

DESCRIPTION SVS7N65D(F)(MJ)(FJ)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power de

文件：281.13 Kbytes 页数：10 Pages

SILAN

士兰微

丝印：7N65FJD2；Package：TO-220FJ-3L；7A, 650V SUPER JUNCTION MOS POWER TRANSISTOR

DESCRIPTION SVS7N65D(F)(MJ)(FJ)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power de

文件：281.13 Kbytes 页数：10 Pages

SILAN

士兰微

丝印：7N65FJD2；Package：TO-220FJ-3L；7A, 650V SUPER JUNCTION MOS POWER TRANSISTOR

DESCRIPTION SVS7N65D(F)(MJ)(FJ)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power de

文件：289.86 Kbytes 页数：10 Pages

SILAN

士兰微

丝印：7N65FJD2；Package：TO-220FJ-3L；7A, 650V SUPER JUNCTION MOS POWER TRANSISTOR

DESCRIPTION SVS7N65D(F)(MJ)(FJ)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power de

文件：289.86 Kbytes 页数：10 Pages

SILAN

士兰微