7N65F

N-CHANNEL POWER MOSFET

Features ●RDS(ON)

7N65F

7A mps,650 Volts N-CHANNEL MOSFET

FEATURE ●7A,650V,RDS(ON)=1.4Ω@VGS=10V/3.5A ●Lowgatecharge ●LowCiss ●Fastswitching ●100avalanchetested ●Improveddv/dtcapability

7N65F

N-channel power MOS tube

Features *VDS(V)=650V *RDS(ON)

7N65F

650V N-Channel Enhancement Mode MOSFET

Description TheAP7N65F/PissiliconN-channelEnhanced VDMOSFETs,isobtainedbytheself-alignedplanarTechnology whichreducetheconductionloss,improveswitching performanceandenhancetheavalancheenergy.Thetransistor canbeusedinvariouspowerswitchingcircuitforsystem mini

7N65FJD2

7A, 650V SUPER JUNCTION MOS POWER TRANSISTOR

DESCRIPTION SVS7N65D(F)(MJ)(FJ)D2isanN-channelenhancementmodehigh voltagepowerMOSFETsproducedusingSilan’ssuperjunctionMOS technology.Itachieveslowconductionlossandswitchinglosses.It leadsthedesignengineerstotheirpowerconverterswithhigh efficiency,highpowerde

7N65G

N-CHANNELPOWERMOSFET

Features ●RDS(ON)

7N65H

7Amps,650VoltsN-CHANNELMOSFET

FEATURE ●7A,650V,RDS(ON)=1.4Ω@VGS=10V/3.5A ●Lowgatecharge ●LowCiss ●Fastswitching ●100avalanchetested ●Improveddv/dtcapability

7N65H

7A,650VN-CHANNELMOSFET

7N65-HC

7A,650VN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC7N65-HCisaN-channelmodepowerMOSFET usingUTC’sadvancedtechnologytoprovidecustomerswith planarstripeandDMOStechnology.Thistechnologyallowsa minimumon-stateresistanceandsuperiorswitching performance.Italsocanwithstandhighenergypulseinthe

7N65K

7.4A,650VN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC7N65KisahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsi