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SVS7N65FJD2中文资料士兰微数据手册PDF规格书
SVS7N65FJD2规格书详情
DESCRIPTION
SVS7N65D(F)(MJ)(FJ)D2 is an N-channel enhancement mode high
voltage power MOSFETs produced using Silan’s super junction MOS
technology. It achieves low conduction loss and switching losses. It
leads the design engineers to their power converters with high
efficiency, high power density, and superior thermal behavior.
Furthermore, it’s universal applicable, for example, it is suitable for
hard and soft switching topologies, Lighting, Adapters, etc.
FEATURES
7A,650V, RDS(on)(typ.)=0.55@VGS=10V
New revolutionary high voltage technology
Ultra low gate charge
Enhanced avalanche capability
Extreme dv/dt rated
High peak current capability
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
JST(日压) |
2021+ |
8000 |
原装现货，欢迎询价 |
询价 | |||
VPT |
23+ |
S/N |
1365 |
DC-DC电源模块 |
询价 | ||
士兰微 |
24+ |
10000 |
原装现货 |
询价 | |||
SILAN/士兰微 |
21+ |
原厂封装 |
38500 |
询价 | |||
VPT |
24+ |
N/A |
3600 |
原厂正规渠道、进口原装正品假一罚十 |
询价 | ||
SILAN/士兰微 |
25+ |
TO-251 |
10000 |
原厂原装,价格优势 |
询价 | ||
SAMSUNG/三星 |
23+ |
DIP52 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | ||
VPT |
23+ |
金属双列直插(无法兰) |
5000 |
公司只做原装,可配单 |
询价 | ||
24+ |
DIP |
120 |
询价 | ||||
SILAN(士兰微) |
2025+ |
TO-220FJ-3L |
10560 |
询价 |
