SVS7N65FJD2中文资料士兰微数据手册PDF规格书

厂商型号	SVS7N65FJD2
功能描述	7A, 650V SUPER JUNCTION MOS POWER TRANSISTOR
丝印标识	7N65FJD2
封装外壳	TO-220FJ-3L
文件大小	281.13 Kbytes
页面数量	10 页
生产厂商	Silan Microelectronics Joint-stock
企业简称	SILAN【士兰微】
中文名称	杭州士兰微电子股份有限公司官网
原厂标识
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-6-25 17:00:00
人工找货	SVS7N65FJD2价格和库存，欢迎联系客服免费人工找货

DESCRIPTION

SVS7N65D(F)(MJ)(FJ)D2 is an N-channel enhancement mode high

voltage power MOSFETs produced using Silan’s super junction MOS

technology. It achieves low conduction loss and switching losses. It

leads the design engineers to their power converters with high

efficiency, high power density, and superior thermal behavior.

Furthermore, it’s universal applicable, for example, it is suitable for

hard and soft switching topologies, Lighting, Adapters, etc.

FEATURES

 7A,650V, RDS(on)(typ.)=0.55@VGS=10V

 New revolutionary high voltage technology

 Ultra low gate charge

 Enhanced avalanche capability

 Extreme dv/dt rated

 High peak current capability