7N65D

N-CHANNEL POWER MOSFET

Features ●RDS(ON)

7N65F

7Amps,650VoltsN-CHANNELMOSFET

FEATURE ●7A,650V,RDS(ON)=1.4Ω@VGS=10V/3.5A ●Lowgatecharge ●LowCiss ●Fastswitching ●100avalanchetested ●Improveddv/dtcapability

7N65F

N-CHANNELPOWERMOSFET

Features ●RDS(ON)

7N65F

N-channelpowerMOStube

Features *VDS(V)=650V *RDS(ON)

7N65F

650VN-ChannelEnhancementModeMOSFET

Description TheAP7N65F/PissiliconN-channelEnhanced VDMOSFETs,isobtainedbytheself-alignedplanarTechnology whichreducetheconductionloss,improveswitching performanceandenhancetheavalancheenergy.Thetransistor canbeusedinvariouspowerswitchingcircuitforsystem mini

7N65-F

N-CHANNELJUNCTIONFIELDEFFECTTRANSISTOR

DESCRIPTION TheUTC7N65-FisahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplications

7N65G

N-CHANNELPOWERMOSFET

Features ●RDS(ON)

7N65H

7Amps,650VoltsN-CHANNELMOSFET

FEATURE ●7A,650V,RDS(ON)=1.4Ω@VGS=10V/3.5A ●Lowgatecharge ●LowCiss ●Fastswitching ●100avalanchetested ●Improveddv/dtcapability

7N65H

7A,650VN-CHANNELMOSFET

7N65-HC

7A,650VN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC7N65-HCisaN-channelmodepowerMOSFET usingUTC’sadvancedtechnologytoprovidecustomerswith planarstripeandDMOStechnology.Thistechnologyallowsa minimumon-stateresistanceandsuperiorswitching performance.Italsocanwithstandhighenergypulseinthe