丝印：7N10L180；Package：PG-TDSON-8-33；OptiMOSTM 7 Power-Transistor

Features • OptiMOSTM power MOSFET for automotive applications • N-channel – Enhancement mode – Logic Level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL1 up to 260°C peak reflow • 175°C operating temperature • RoHS compliant • 100% Avalan

文件：2.93293 Mbytes 页数：12 Pages

INFINEON

英飞凌

丝印：7N10N021；Package：PG-TDSON-8-53；Automotive MOSFET OptiMOSTM 7 Power-Transistor

Features • OptiMOSTM power MOSFET for automotive applications • N-channel – Enhancement mode – Normal Level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL1 up to 260°C peak reflow • 175°C operating temperature • RoHS compliant • 100% Avala

文件：3.12902 Mbytes 页数：12 Pages

INFINEON

英飞凌

丝印：7N10N040；Package：PG-TDSON-8-34；Automotive MOSFET OptiMOSTM 7 Power-Transistor

Features • OptiMOSTM power MOSFET for automotive applications • N-channel – Enhancement mode – Normal Level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL1 up to 260°C peak reflow • 175°C operating temperature • RoHS compliant • 100% Avala

文件：3.07594 Mbytes 页数：12 Pages

INFINEON

英飞凌

丝印：7N10N074；Package：PG-TDSON-8-34；OptiMOSTM 7 Power-Transistor

Features • OptiMOSTM power MOSFET for automotive applications • N-channel – Enhancement mode – Normal Level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL1 up to 260°C peak reflow • 175°C operating temperature • RoHS compliant • 100% Avala

文件：3.01412 Mbytes 页数：12 Pages

INFINEON

英飞凌

丝印：7N10F；Package：PowerFLAT；N-channel 100 V, 0.027 ??typ., 7 A STripFET??VII DeepGATE?? Power MOSFET in a PowerFLAT??3.3x3.3 package

文件：875.41 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

丝印：7N105K5；Package：TO-220；N-channel 1050 V, 1.4 廓 typ., 4 A MDmesh??K5 Power MOSFETs in TO-220, IPAK and TO-247 packages

文件：989.83 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

丝印：7N105K5；Package：IPAK；N-channel 1050 V, 1.4 廓 typ., 4 A MDmesh??K5 Power MOSFETs in TO-220, IPAK and TO-247 packages

文件：989.83 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

丝印：7N105K5；Package：TO-247；N-channel 1050 V, 1.4 廓 typ., 4 A MDmesh??K5 Power MOSFETs in TO-220, IPAK and TO-247 packages

文件：989.83 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

7A, 100V N-CHANNEL POWER MOSFET

The UTC 7N10Z is an N-Channel enhancement mode power MOSFET providing customers with excellent switching performanceand minimum on-state resistance. The UTC 7N10Z uses planar stripe and DMOS technology to provide perfect quality. This device can also withstand high energy pulse in the avalanche and • Low Gate Charge: 5.8nC (TYP.) \n• RDS(ON) = 0.35Ω @VGS = 10 V   \n• Improved dv/dt Capability;

UTC

友顺

Planar Power MOSFET  (N-CH)

UTC

友顺