IAUCN10S7N074

丝印：7N10N074；Package：PG-TDSON-8-34；OptiMOSTM 7 Power-Transistor

Features •OptiMOSTMpowerMOSFETforautomotiveapplications •N-channel–Enhancementmode–NormalLevel •ExtendedqualificationbeyondAEC-Q101 •Enhancedelectricaltesting •Robustdesign •MSL1upto260°Cpeakreflow •175°Coperatingtemperature •RoHScompliant •100%Avala

IAUCN10S7N074

100 V, N-Ch, 7.4 mΩ max, Automotive MOSFET, SSO8 (5x6), OptiMOS™ 7; • Low on-resistance, RDS(on)\n• Leading edge FOM (RDS(on)x Qg)\n• Fast switching times (turn on/off)\n• High avalanche current capability\n• High SOA ruggedness\n• Tight threshold voltage, VGS(th), range\n• Excellent thermal performance\n• Low package resistance and inductance\n• Unique fused source pins\n• Extended qualification beyond AEC-Q101\n• Enhanced electrical testing\n• MSL1 up to 260°C peak reflow\n\n优势:\n• Very low conduction losses\n• Superior switching performance\n• Highest power density in 5x6 mm2 package\n• High power efficiency\n• Small footprint & efficient cooling\n• Well suited for parallel placement\n• Increased design ruggedness\n• Better solder joint reliability\n• Designed for Automotive robustness\n• High quality production for Automotive\n;