丝印：7N10N040；Package：PG-TDSON-8-34；Automotive MOSFET OptiMOSTM 7 Power-Transistor

Features • OptiMOSTM power MOSFET for automotive applications • N-channel – Enhancement mode – Normal Level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL1 up to 260°C peak reflow • 175°C operating temperature • RoHS compliant • 100% Avala

文件：3.07594 Mbytes 页数：12 Pages

Infineon

英飞凌

100 V, N-Ch, 4.0 mΩ max, Automotive MOSFET, SSO8 (5x6), OptiMOS™ 7

• Low on-resistance, RDS(on)\n• Leading edge FOM (RDS(on)x Qg)\n• Fast switching times (turn on/off)\n• High avalanche current capability\n• High SOA ruggedness\n• Tight threshold voltage, VGS(th), range\n• Excellent thermal performance\n• Low package resistance and inductance\n• Unique fused source;

Infineon

英飞凌

INFINEON/英飞凌
PG-HSOG-8

INFINEON/英飞凌

上传：深圳市钜韬电子有限公司

INFINEON
HSOF-8

Infineon

英飞凌

上传：深圳市壹芯创科技有限公司

infineon
8HSOF

Infineon

英飞凌

上传：深圳市远进半导体有限公司