IAUCN10S7L180

丝印：7N10L180；Package：PG-TDSON-8-33；OptiMOSTM 7 Power-Transistor

Features •OptiMOSTMpowerMOSFETforautomotiveapplications •N-channel–Enhancementmode–LogicLevel •ExtendedqualificationbeyondAEC-Q101 •Enhancedelectricaltesting •Robustdesign •MSL1upto260°Cpeakreflow •175°Coperatingtemperature •RoHScompliant •100%Avalan

IAUCN10S7L180

100 V, N-Ch, 18 mΩ max, Automotive MOSFET, SSO8 (5x6), OptiMOS™ 7; • Fast switching times (turn on/off)\n• Low on-resistance, RDS(on)\n• Leading edge FOM (RDS(on)x Qg)\n• High avalanche current capability\n• High SOA ruggedness\n• Tight threshold voltage, VGS(th), range\n• Excellent thermal performance\n• Low package resistance and inductance\n• Unique fused source pins\n• Extended qualification beyond AEC-Q101\n• Enhanced electrical testing\n• MSL1 up to 260°C peak reflow\n\n优势:\n• Superior switching performance\n• Very low conduction losses\n• Highest power density in 5x6 mm2 package\n• High power efficiency\n• Well suited for parallel placement\n• Increased design ruggedness\n• Better solder joint reliability\n• Designed for Automotive robustness\n• High quality production for Automotive\n;