512K x 36, 1M x 18 2.5V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs

Features ◆ 512K x 36, 1M x 18 memory configurations ◆ Supports high performance system speed - 200 MHz (3.2 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W

文件：348.97 Kbytes 页数：28 Pages

RENESAS

瑞萨

2.5V Synchronous ZBT SRAMs I/O, Burst Counter Pipelined Outputs

文件：260.17 Kbytes 页数：26 Pages

IDT

512K x 36, 1M x 18 2.5V Synchronous ZBT™ SRAMs 2.5V I/O, Burst Counter Pipelined Outputs

Features ◆ 512K x 36, 1M x 18 memory configurations ◆ Supports high performance system speed - 200 MHz (3.2 ns Clock-to-Data Access) ◆ ZBTTM Feature - No dead cycles between write and read cycles ◆ Internally synchronized output buffer enable eliminates the need to control OE ◆ Single R/W

文件：348.97 Kbytes 页数：28 Pages

RENESAS

瑞萨

2.5V Synchronous ZBT SRAMs I/O, Burst Counter Pipelined Outputs

文件：260.17 Kbytes 页数：26 Pages

IDT

Package：119-BGA；包装：卷带（TR） 类别：集成电路（IC） 存储器 描述：IC SRAM 18MBIT PARALLEL 119PBGA

Renesas Electronics America Inc

Package：119-BGA；包装：托盘 类别：集成电路（IC） 存储器 描述：IC SRAM 18MBIT PARALLEL 119PBGA

Renesas Electronics America Inc