丝印：702；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

Description These N−channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while providing rugged, reliable, and fast switching performance. These products

文件：372.34 Kbytes 页数：13 Pages

ONSEMI

安森美半导体

丝印：702；Package：SOT-23；N-CHANNEL ENHANCEMENT-MODE MOSFET

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N7002 type is an N-Channel enhancement-mode MOSFET manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications.

文件：80.02 Kbytes 页数：2 Pages

CENTRAL

丝印：702；Package：SOT-23；SMD Signal DMOS Transistor (N-Channel)

Features • Voltage Controlled Small Signal Switch • High Density Cell Design for Low RDS(ON) • Rugged and Reliable • High Saturation Current Capablity • RoHS Compliance

文件：245.32 Kbytes 页数：7 Pages

TAITRON

丝印：702；Package：SOT-363；Double N-CHANNEL MOSFET in a SOT-363 Plastic Package.

Features Sensitive gate trigger current and Low Holding current.ESD protected diode. ESD rating:2200V HBM Halogen-free

文件：483.53 Kbytes 页数：7 Pages

RECTRON

丽正

丝印：702；Package：SOT-363；60V N-Channel Enhancement Mode MOSFET

DUAL N-CHANNEL ENHANCEMENT MODE MOSFETS This space-efficient device contains two electrically-isolated N-Channel enhancement-mode MOSFETs. It comes in a very small SOT-363 (SC70-6L) package. This device is ideal for portable applications where board space is at a premium. FEATURES ● Low On-Re

文件：172.69 Kbytes 页数：5 Pages

PANJIT

強茂

丝印：702；Package：SOT-23-6L；Double N-CHANNEL MOSFET in a SOT23-6L Plastic Package.

Features Sensitive gate trigger current and Low Holding current.ESD protected diode. ESD rating:2200V HBM Applications Intended for use in general purpose switching and phase control applications.

文件：283.89 Kbytes 页数：6 Pages

RECTRON

丽正

丝印：702；Package：SOT-363；Double N-CHANNEL MOSFET in a SOT-363 Plastic Package.

Features Sensitive gate trigger current and Low Holding current.ESD protected diode. ESD rating:2200V HBM Applications Intended for use in general purpose switching and phase control applications.

文件：461.13 Kbytes 页数：7 Pages

RECTRON

丽正

丝印：702；Package：SOT-23；Advanced Small Signal MOSFET

BVDSS = 60 V RDS(on) = 5.0 Ω ID = 200 mA FEATURES ● Lower RDS(on) ● Improved Inductive Ruggedness ● Fast Switching Times ● Lower Input Capacitance ● Extended Safe Operating Area ● Improved High Temperature Reliability

文件：162.29 Kbytes 页数：4 Pages

FAIRCHILD

仙童半导体

丝印：702；WE-TI Radial Leaded Wire Wound Inductor

General Properties: Ambient Temperature (referring to IR) -40 up to +85 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：933.66 Kbytes 页数：7 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：702；Package：SOT-23；Small Signal MOSFET 115 mAmps, 60 Volts

Small Signal MOSFET 115 mAmps, 60 Volts N-CHANNEL SOT-23 N–Channel SOT–23 • Pb−Free Package is Available.

文件：70.67 Kbytes 页数：3 Pages

LRC

乐山无线电