(22.2 mm) Single Turn Wirewound (Precision Potentiometer)s

FEATURES • Large range of ohmic values: From 5  up to 100 k • Bushing mount or servo mount types are available • Extra taps upon request • Gangable up to 6 sections • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

文件：103.26 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世科技

PHENOLIC INSTRUMENT CASES

[KEYSTONE] PHENOLIC INSTRUMENT CASES •Choice of Sizes •Sturdy construction •Flush mounting panels •Cases and panels are sold separately •Covers available in Phenolic or Aluminum •Covers can be machined to accept dials, switches, displays •Panel mounting screws available

文件：310.42 Kbytes 页数：1 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

702/703 Flanged Diaphragm Seal

FEATURES „„ Large diaphragm provides ample displacement for low pressure applications

文件：1.09151 Mbytes 页数：4 Pages

ASHCROFT

雅斯科

丝印：702；Package：SOT-23；N-Channel Enhancement Mode MOSFET

■ Features ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability

文件：74.34 Kbytes 页数：1 Pages

KEXIN

科信电子

丝印：702；Package：SOT-23；N-CHANNEL ENHANCEMENT-MODE MOSFET

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N7002 type is an N-Channel enhancement-mode MOSFET manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications.

文件：80.02 Kbytes 页数：2 Pages

Central

丝印：702；Package：SOT-23；N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

FEATURES * 60 Volt VCEO

文件：25.02 Kbytes 页数：1 Pages

Zetex

丝印：702；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

Description These N-channel enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used

文件：538.2 Kbytes 页数：14 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

丝印：702；Package：SOT-23；Advanced Small Signal MOSFET

BVDSS = 60 V RDS(on) = 5.0 Ω ID = 200 mA FEATURES ● Lower RDS(on) ● Improved Inductive Ruggedness ● Fast Switching Times ● Lower Input Capacitance ● Extended Safe Operating Area ● Improved High Temperature Reliability

文件：162.29 Kbytes 页数：4 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

丝印：702；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

Description These N-channel enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used

文件：116.2 Kbytes 页数：7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

丝印：702；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

Description These N−channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while providing rugged, reliable, and fast switching performance. These products

文件：372.34 Kbytes 页数：13 Pages

ONSEMI

安森美半导体