丝印：6D；Package：SC-89；Bias Resistor Transistors

Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a mono

文件：774.3 Kbytes 页数：12 Pages

LRC

乐山无线电

丝印：6D；Package：SOD-123F；SILICON PLANAR ZENER DIODES

Features • Total power dissipation: max. 500 mW • Small plastic package suitable for surface mounted design • Tolerance approximately ± 5

文件：272.29 Kbytes 页数：4 Pages

SEMTECH_ELEC

先之科半导体

丝印：6D；Silicon Planar Zener Diodes

FEATURES • Total power dissipation: Max. 500mW. • Wide zener reverse voltage range 2.0V to 75V. • Small plastic package suitable for surface mounted design. • Tolerance approximately±5

文件：776.59 Kbytes 页数：2 Pages

JUXING

广东钜兴电子

丝印：6D；Package：SOT-23；N-Channel General Purpose Amplifier

N-Channel General Purpose Amplifier This device is a low level audio amplifier and switching transistors, and can be used for analog switching applications. Sourced from Process 55.

文件：105.4 Kbytes 页数：4 Pages

FAIRCHILD

仙童半导体

丝印：6D；Package：SOT363；80 V, 100 mA PNP/PNP resistor-equipped double transistors

Features and benefits • 100 mA output current capability • High breakdown voltage • Built-in resistors • Simplifies circuit design • Reduces component count • Reduces pick and place costs • AEC-Q101 qualified

文件：297.82 Kbytes 页数：15 Pages

NEXPERIA

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丝印：6D；Package：SC-88；80 V, 100 mA PNP/PNP resistor-equipped double transistors

1. General description PNP/PNP Resistor-Equipped double Transistor (RET) family in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number R1 R2 Package kΩ kΩ Nexperia JEITA NPN/NPN complement: NPN/PNP complement: NHUMB10 2.2 47 NHU

文件：297.85 Kbytes 页数：15 Pages

NEXPERIA

安世

丝印：6D；Package：SC-88；80 V, 100 mA PNP/PNP resistor-equipped double transistors

Features and benefits • 100 mA output current capability • High breakdown voltage • Built-in resistors • Simplifies circuit design • Reduces component count • Reduces pick and place costs • Qualified according to AEC-Q101 and recommended for use in automotive applications

文件：306.52 Kbytes 页数：15 Pages

NEXPERIA

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丝印：6D；Package：SOT89；20 V, 7 A NPN low VCEsat (BISS) transistor

1. General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS4021PX. 2. Features and benefits • Very low collector-emitter saturation voltage VCEsat • Hig

文件：727.03 Kbytes 页数：14 Pages

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丝印：6D；Package：SOT666；PNP/PNP resistor-equipped transistors; R1 = 22 kW, R2 = open

Features * Built-in bias resistors * Simplifies circuit design * Reduces component count * Reduces pick and place cost

文件：185.92 Kbytes 页数：11 Pages

NEXPERIA

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丝印：6D；Package：DFN1412D-3；ESD protection for In-vehicle networks

1. General description ESD protection device in an ultra small DFN1412D-3 (SOT8009) leadless Surface-Mounted Device (SMD) plastic package with side wettable flanks designed to protect two automotive In-vehicle network bus lines from the damage caused by ElectroStatic discharge (ESD) and other t

文件：299.95 Kbytes 页数：12 Pages

NEXPERIA

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