丝印：5N1；WE-KI SMT Wire Wound Ceramic Inductor

General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +110 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：496.4 Kbytes 页数：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：5N10L110；Package：PG-TDSON-8-33；OptiMOS™-5 Power Transistor

Features • OptiMOS™ power MOSFET for automotive applications • N-channel - Enhancement mode - Logic Level • MSL1 up to 260°C peak reflow • 175 °C operating temperature • Green product (RoHS compliant) • 100 Avalanche tested

文件：1.20359 Mbytes 页数：10 Pages

Infineon

英飞凌

丝印：5N1L094D；Package：PG-TDSON-8-60；OptiMOSTM 5 Power-Transistor

Features • OptiMOSTM power MOSFET for automotive applications • N-channel – Enhancement mode – Logic Level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL1 up to 260°C peak reflow • 175°C operating temperature • RoHS compliant • 100% Avalan

文件：1.21062 Mbytes 页数：12 Pages

Infineon

英飞凌

丝印：5N1L280D；Package：PG-TDSON-8-61；OptiMOSTM 5 Power-Transistor

Features • OptiMOSTM power MOSFET for automotive applications • N-channel – Enhancement mode – Logic Level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL1 up to 260°C peak reflow • 175°C operating temperature • RoHS compliant • 100% Avalan

文件：1.15847 Mbytes 页数：12 Pages

Infineon

英飞凌

丝印：5N10N016；Package：PG-HSOG-4-1；Automotive MOSFET OptiMOS™ 5 Power-Transistor

Features • OptiMOS™ power MOSFET for automotive applications • N-channel – Enhancement mode – Normal Level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL2 up to 260°C peak reflow • 175°C operating temperature • RoHS compliant • 100% Avalan

文件：1.11794 Mbytes 页数：12 Pages

Infineon

英飞凌

丝印：5N10N017；Package：PG-HSOG-4-1；Automotive MOSFET OptiMOS™ 5 Power-Transistor

Features • OptiMOS™ power MOSFET for automotive applications • N-channel – Enhancement mode – Normal Level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL2 up to 260°C peak reflow • 175°C operating temperature • RoHS compliant • 100% Avalan

文件：1.10756 Mbytes 页数：12 Pages

Infineon

英飞凌

丝印：5N10014；Package：PG-HSOF-8-1；OptiMOS™-5 Power-Transistor

Features • OptiMOS™ power MOSFET for automotive applications • N-channel – Enhancement mode – Normal Level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) •

文件：1.4308 Mbytes 页数：10 Pages

Infineon

英飞凌

丝印：5N12N017；Package：PG-HSOF-8-1；OptiMOS™ 5 Power-Transistor

Features • OptiMOS™ power MOSFET for automotive applications • N-channel – enhancement mode – normal level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL1 up to 260°C peak reflow • 175°C operating temperature • RoHS compliant • 100% avalan

文件：1.34328 Mbytes 页数：12 Pages

Infineon

英飞凌

丝印：5N12N018；Package：PG-HSOG-8-1；OptiMOS™ 5 Power-Transistor

Potential applications General automotive applications. Features • OptiMOS™ power MOSFET for automotive applications • N-channel – enhancement mode – normal level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL1 up to 260°C peak reflow • 175°

文件：1.46223 Mbytes 页数：12 Pages

Infineon

英飞凌

丝印：5N12N018；Package：PG-HDSOP-16-1；OptiMOS™ 5 Power-Transistor

Features • OptiMOS™ power MOSFET for automotive applications • N-channel – enhancement mode – normal level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL1 up to 260°C peak reflow • 175°C operating temperature • RoHS compliant • 100% avalan

文件：1.61799 Mbytes 页数：12 Pages

Infineon

英飞凌