丝印：5N800；Package：TO-220；N-Channel Super Junction Power MOSFET III

Features New technology for high voltage device Low on-resistance and low conduction losses small package Uttra Low Gate Charge cause lower driving requirements 100% Avalanche Tested ROHS compliant Halogen-free.

文件：1.37327 Mbytes 页数：10 Pages

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丝印：5N800；Package：TO-263；N-Channel Super Junction Power MOSFET III

Features New technology for high voltage device Low on-resistance and low conduction losses small package Uttra Low Gate Charge cause lower driving requirements 100% Avalanche Tested ROHS compliant Halogen-free.

文件：1.37327 Mbytes 页数：10 Pages

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丝印：5N800；Package：TO-220F；N-Channel Super Junction Power MOSFET III

Features New technology for high voltage device Low on-resistance and low conduction losses small package Uttra Low Gate Charge cause lower driving requirements 100% Avalanche Tested ROHS compliant Halogen-free.

文件：1.37327 Mbytes 页数：10 Pages

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丝印：5N800；Package：TO-251；N-Channel Super Junction Power MOSFET

文件：500.6 Kbytes 页数：8 Pages

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丝印：5N800；Package：TO-252；N-Channel Super Junction Power MOSFET

文件：500.6 Kbytes 页数：8 Pages

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