| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Marking：5N1；WE-KI SMT Wire Wound Ceramic Inductor GeneralInformation: Itisrecommendedthatthetemperatureofthecomponentdoesnotexceed+125°Cunderworst caseconditions AmbientTemperature(referring toIR)-40upto+110°C OperatingTemperature-40upto+125°C StorageConditions(inoriginal packaging) | WURTHWurth Elektronik GmbH & Co. KG, Germany. 伍尔特伍尔特集团 | WURTH | ||
Marking：5N10L110；Package：PG-TDSON-8-33；OptiMOS™-5 Power Transistor Features •OptiMOS™powerMOSFETforautomotiveapplications •N-channel-Enhancementmode-LogicLevel •MSL1upto260°Cpeakreflow •175°Coperatingtemperature •Greenproduct(RoHScompliant) •100Avalanchetested | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
Marking：5N1L094D；Package：PG-TDSON-8-60；OptiMOSTM 5 Power-Transistor Features •OptiMOSTMpowerMOSFETforautomotiveapplications •N-channel–Enhancementmode–LogicLevel •ExtendedqualificationbeyondAEC-Q101 •Enhancedelectricaltesting •Robustdesign •MSL1upto260°Cpeakreflow •175°Coperatingtemperature •RoHScompliant •100%Avalan | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
Marking：5N1L280D；Package：PG-TDSON-8-61；OptiMOSTM 5 Power-Transistor Features •OptiMOSTMpowerMOSFETforautomotiveapplications •N-channel–Enhancementmode–LogicLevel •ExtendedqualificationbeyondAEC-Q101 •Enhancedelectricaltesting •Robustdesign •MSL1upto260°Cpeakreflow •175°Coperatingtemperature •RoHScompliant •100%Avalan | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
Marking：5N10N016；Package：PG-HSOG-4-1；Automotive MOSFET OptiMOS™ 5 Power-Transistor Features •OptiMOS™powerMOSFETforautomotiveapplications •N-channel–Enhancementmode–NormalLevel •ExtendedqualificationbeyondAEC-Q101 •Enhancedelectricaltesting •Robustdesign •MSL2upto260°Cpeakreflow •175°Coperatingtemperature •RoHScompliant •100%Avalan | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
Marking：5N10N017；Package：PG-HSOG-4-1；Automotive MOSFET OptiMOS™ 5 Power-Transistor Features •OptiMOS™powerMOSFETforautomotiveapplications •N-channel–Enhancementmode–NormalLevel •ExtendedqualificationbeyondAEC-Q101 •Enhancedelectricaltesting •Robustdesign •MSL2upto260°Cpeakreflow •175°Coperatingtemperature •RoHScompliant •100%Avalan | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
Marking：5N10014；Package：PG-HSOF-8-1；OptiMOS™-5 Power-Transistor Features •OptiMOS™powerMOSFETforautomotiveapplications •N-channel–Enhancementmode–NormalLevel •ExtendedqualificationbeyondAEC-Q101 •Enhancedelectricaltesting •Robustdesign •MSL1upto260°Cpeakreflow •175°Coperatingtemperature •Greenproduct(RoHScompliant) • | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
Marking：5N12N017；Package：PG-HSOF-8-1；OptiMOS™ 5 Power-Transistor Features •OptiMOS™powerMOSFETforautomotiveapplications •N-channel–enhancementmode–normallevel •ExtendedqualificationbeyondAEC-Q101 •Enhancedelectricaltesting •Robustdesign •MSL1upto260°Cpeakreflow •175°Coperatingtemperature •RoHScompliant •100%avalan | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
Marking：5N12N018；Package：PG-HSOG-8-1；OptiMOS™ 5 Power-Transistor Potentialapplications Generalautomotiveapplications. Features •OptiMOS™powerMOSFETforautomotiveapplications •N-channel–enhancementmode–normallevel •ExtendedqualificationbeyondAEC-Q101 •Enhancedelectricaltesting •Robustdesign •MSL1upto260°Cpeakreflow •175° | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
Marking：5N12N018；Package：PG-HDSOP-16-1；OptiMOS™ 5 Power-Transistor Features •OptiMOS™powerMOSFETforautomotiveapplications •N-channel–enhancementmode–normallevel •ExtendedqualificationbeyondAEC-Q101 •Enhancedelectricaltesting •Robustdesign •MSL1upto260°Cpeakreflow •175°Coperatingtemperature •RoHScompliant •100%avalan | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon |
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