丝印：5N50；Package：TO-220-3L；N-Channel Enhancement Mode Power MOSFET

General Features Vds =500 Id =5A Rds(on)

文件：506.96 Kbytes 页数：5 Pages

RECTRON

丽正国际

丝印：5N50；Package：TO-220F；N-Channel Power MOSFET

General Features VDS =500V,ID =5A RDS(ON)

文件：438.49 Kbytes 页数：5 Pages

RECTRON

丽正国际

丝印：5N500；Package：TO-251；N-Channel Enhancement Mode Power MOSFET

General Features VDS =500V,ID =5A RDS(ON)

文件：257.61 Kbytes 页数：7 Pages

RECTRON

丽正国际

丝印：5N50AT；Package：TO-220AB；5A 500V N-channel enhanced field effect transistor

文件：1.04666 Mbytes 页数：7 Pages

YFWDIODE

佑风微

丝印：5N50AF；Package：TO-220F；5A 500V N-channel enhanced field effect transistor

文件：1.04666 Mbytes 页数：7 Pages

YFWDIODE

佑风微

丝印：5N50AS；Package：TO-263；5A 500V N-channel enhanced field effect transistor

文件：1.04666 Mbytes 页数：7 Pages

YFWDIODE

佑风微

丝印：5N50AS；Package：TO-263；5A 500V N-channel enhanced field effect transistor

文件：1.04666 Mbytes 页数：7 Pages

YFWDIODE

佑风微

丝印：5N50AMJ；Package：TO-251；5A 500V N-channel enhanced field effect transistor

文件：1.04666 Mbytes 页数：7 Pages

YFWDIODE

佑风微

丝印：5N50AD；Package：TO-252；5A 500V N-channel enhanced field effect transistor

文件：1.04666 Mbytes 页数：7 Pages

YFWDIODE

佑风微

N-Channel 650V (D-S) Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Server and telecom power supplies • Switch mode power supplies (SMPS) • Power factor correcti

文件：1.19767 Mbytes 页数：10 Pages

VBSEMI

微碧半导体