RM5N500IP中文资料RECTRON数据手册PDF规格书
RM5N500IP规格书详情
General Features
VDS =500V,ID =5A
RDS(ON) <1.5 @ VGS=10V
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability