丝印：5N6；WE-KI SMT Wire Wound Ceramic Inductor

General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +110 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：496.12 Kbytes 页数：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：5N6；WE-KI SMT Wire Wound Ceramic Inductor

General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +110 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：495.07 Kbytes 页数：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：5N65M6；Package：DPAK；N-channel 650 V, 1.15 Ω typ., 4 A MDmesh™ M6 Power MOSFET in a DPAK package

Features  Reduced switching losses  Lower RDS(on) x area vs previous generation  Low gate input resistance  100 avalanche tested  Zener-protected Applications  Switching applications Description The new MDmesh™ M6 technology incorporates the most recent advancements to the well

文件：801.56 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

丝印：5N65M6；Package：TO-220FP；N-channel 650 V, 1.15 Ω typ., 4 A MDmesh™ M6 Power MOSFET in a TO-220FP package

Features  Reduced switching losses  Lower RDS(on) x area vs previous generation  Low gate input resistance  100 avalanche tested  Zener-protected Applications  Switching applications Description The new MDmesh™ M6 technology incorporates the most recent advancements to the well

文件：700.25 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

丝印：5N6L140；Package：PG-TSDSON-8-32；OptiMOS??5 Power Transistor

文件：836.77 Kbytes 页数：10 Pages

Infineon

英飞凌

丝印：5N6L050；Package：PG-TSDSON-8-33；OptiMOS??5 Power-Transistor

文件：750.29 Kbytes 页数：12 Pages

Infineon

英飞凌

丝印：5N650；Package：TO-251；N-Channel Super Junction Power MOSFET

文件：525.25 Kbytes 页数：8 Pages

RECTRON

丝印：5N650；Package：TO-252；N-Channel Super Junction Power MOSFET

文件：525.25 Kbytes 页数：8 Pages

RECTRON

丝印：5N60AT；Package：TO-220AB；5A 600V N-channel enhanced field effect transistor

文件：1.0671 Mbytes 页数：7 Pages

YFWDIODE

佑风微电子

丝印：5N60AF；Package：TO-220F；5A 600V N-channel enhanced field effect transistor

文件：1.0671 Mbytes 页数：7 Pages

YFWDIODE

佑风微电子