744760056A

Marking：5N6；WE-KI SMT Wire Wound Ceramic Inductor

GeneralInformation: Itisrecommendedthatthetemperatureofthecomponentdoesnotexceed+125°Cunderworst caseconditions AmbientTemperature(referring toIR)-40upto+110°C OperatingTemperature-40upto+125°C StorageConditions(inoriginal packaging)

744760056GA

Marking：5N6；WE-KI SMT Wire Wound Ceramic Inductor

GeneralInformation: Itisrecommendedthatthetemperatureofthecomponentdoesnotexceed+125°Cunderworst caseconditions AmbientTemperature(referring toIR)-40upto+110°C OperatingTemperature-40upto+125°C StorageConditions(inoriginal packaging)

STD5N65M6

Marking：5N65M6；Package：DPAK；N-channel 650 V, 1.15 Ω typ., 4 A MDmesh™ M6 Power MOSFET in a DPAK package

Features Reducedswitchinglosses LowerRDS(on)xareavspreviousgeneration Lowgateinputresistance 100avalanchetested Zener-protected Applications Switchingapplications Description ThenewMDmesh™M6technologyincorporates themostrecentadvancementstothewell

STF5N65M6

Marking：5N65M6；Package：TO-220FP；N-channel 650 V, 1.15 Ω typ., 4 A MDmesh™ M6 Power MOSFET in a TO-220FP package

Features Reducedswitchinglosses LowerRDS(on)xareavspreviousgeneration Lowgateinputresistance 100avalanchetested Zener-protected Applications Switchingapplications Description ThenewMDmesh™M6technologyincorporates themostrecentadvancementstothewell

IAUZ30N06S5L140

Marking：5N6L140；Package：PG-TSDSON-8-32；OptiMOS??5 Power Transistor

IAUZ40N06S5L050

Marking：5N6L050；Package：PG-TSDSON-8-33；OptiMOS??5 Power-Transistor

RM5N650IP

Marking：5N650；Package：TO-251；N-Channel Super Junction Power MOSFET

RM5N650LD

Marking：5N650；Package：TO-252；N-Channel Super Junction Power MOSFET

YFW5N60A1

Marking：5N60AT；Package：TO-220AB；5A 600V N-channel enhanced field effect transistor

YFW5N60A2

Marking：5N60AF；Package：TO-220F；5A 600V N-channel enhanced field effect transistor