RF Transistor

RF Transistor 10V, 70mA, fT=5.5GHz, NPN Single CP Features • High cutoff frequency : fT=5.5GHz typ • High gain : ⏐S21e⏐2=9.5dB typ (f=1GHz)

文件：296.39 Kbytes 页数：8 Pages

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安森美半导体

NPN Epitaxial Planar Silicon Transistor UHF Wide-band Low-noise Amplifier Applications

UHF Wide-band Low-noise Amplifier Applications Features • High cutoff frequency : fT=5.5GHz typ • High gain : ⏐S21e⏐2=9.5dB typ (f=1GHz)

文件：55.23 Kbytes 页数：6 Pages

SANYO

三洋

UHF Wide-band Low-noise Amplifier Applications

文件：404.79 Kbytes 页数：8 Pages

SANYO

三洋

RF Transistor

RF Transistor 10V, 70mA, fT=5.5GHz, NPN Single CP Features • High cutoff frequency : fT=5.5GHz typ • High gain : ⏐S21e⏐2=9.5dB typ (f=1GHz)

文件：296.39 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

UHF Wide-band Low-noise Amplifier Applications

文件：404.79 Kbytes 页数：8 Pages

SANYO

三洋

RF Transistor, NPN Single, 10 V, 70 mA, fT = 5.5 GHz

55GN01CA is RF Transistor, 10 V, 70 mA, fT = 5.5 GHz, NPN Single CP for UHF wide-band, low noise amplifiers. • High cutoff frequency : fT=5.5GHz(typ)\n• High gain : Forward Transfer Gain = 9.5dB(typ) [f=1GHz];

ONSEMI

安森美半导体

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS NPN 10V 4.5GHZ 3CP

ONSEMI

安森美半导体