50N

型号：ZTR500F02；Package：SOT-23；FIXED 2.5 AND 5 VOLT 3-TERMINAL VOLTAGE REFERENCES

50N

型号：ZTR500Z02；Package：SOT-89；FIXED 2.5 AND 5 VOLT 3-TERMINAL VOLTAGE REFERENCES

50N06

型号：50N06；Package：TO-252；60V N-Channel Enhancement Mode Power MOSFET

Features VDS=60V,ID=50A RDS(ON),12mΩ(Typ)@VGS=10V RDS(ON),16mΩ(Typ)@VGS=4.5V AdvancedTrenchTechnology ExcellentRDS(ON)andLowGateCharge Leadfreeproductisacquired

50N65FL2

型号：NGTB50N65FL2WG；Package：TO-247；IGBT - Field Stop II

ThisInsulatedGateBipolarTransistor(IGBT)featuresarobustand costeffectiveFieldStopIITrenchconstruction,andprovidessuperior performanceindemandingswitchingapplications,offeringbothlow onstatevoltageandminimalswitchingloss.TheIGBTiswellsuited forUPSandsolar

50NW

型号：NVTFS6H850NWFTAG；Package：WDFN8；MOSFET- Power, Single N-Channel 80 V, 9.5 m, 68 A

Features •SmallFootprint(3.3x3.3mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowCapacitancetoMinimizeDriverLosses •NVTFS6H850NWF−WettableFlanksProduct •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−FreeandareRoHSCompliant

50N10AL

型号：PJD50N10AL-AU_L2_000A1；Package：TO-252AA；100V N-Channel Enhancement Mode MOSFET

Features RDS(ON),VGS@10V,ID@20A

50N10SA

型号：PJD50N10SA-AU；Package：TO-252AA；100V N-Channel Enhancement Mode MOSFET

Features RDS(ON),VGS@10V,ID@20A

50N200

型号：RM50N200HD；Package：TO-263；200V N-Ch Power MOSFET

Feature HighSpeedPowerSwitching EnhancedBodydiodedv/dtcapability 100UIStested EnhancedAvalancheRuggedness Pb-freeleadplating

50N200

型号：RM50N200T2；Package：TO-220；200V N-Ch Power MOSFET

Feature HighSpeedPowerSwitching EnhancedBodydiodedv/dtcapability 100UIStested EnhancedAvalancheRuggedness Pb-freeleadplating

50N200

型号：RM50N200T7；Package：TO-247；200V N-Ch Power MOSFET

Feature HighSpeedPowerSwitching EnhancedBodydiodedv/dtcapability 100UIStested EnhancedAvalancheRuggedness Pb-freeleadplating