丝印：50N10；Package：TO-252；N-Channel MOSFET

Application « Reverse Battery protection » Load switch Power management PWM Application

文件：3.20706 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

丝印：50N10；Package：TO-220；N-Ch Enhancement Mode Power MOSFET

文件：388.79 Kbytes 页数：4 Pages

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

丝印：50N10AL；Package：TO-252AA；100V N-Channel Enhancement Mode MOSFET

Features  RDS(ON) , VGS@10V, ID@20A

文件：416.37 Kbytes 页数：7 Pages

PANJIT

強茂

丝印：50N10SA；Package：TO-252AA；100V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V, ID@20A

文件：488.55 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：50N105DK5；Package：Max247；N-channel 1050 V, 0.110 Ω typ., 46 A MDmesh™ DK5 Power MOSFET in a Max247 package

Features  Fast-recovery body diode  Best RDS(on) x area  Low gate charge, input capacitance and resistance  100 avalanche tested  Extremely high dv/dt ruggedness Applications  Switching applications Description This very high voltage N-channel Power MOSFET is part of the MDmes

文件：716.28 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体