丝印：50N10；Package：TO-220；N-Ch Enhancement Mode Power MOSFET

文件：388.79 Kbytes 页数：4 Pages

SECOS

喜可士

N-Channel MOSFET uses advanced trench technology

文件：1.00245 Mbytes 页数：3 Pages

DOINGTER

杜因特

54A , 100V , RDS(ON) 22m
N-Ch Enhancement Mode Power MOSFET

文件：1.94076 Mbytes 页数：4 Pages

SECOS

喜可士

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.027 Ω ■ AVALANCHERUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURREN

文件：94.57 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体