N-Channel MOSFET uses advanced trench technology

文件：1.00245 Mbytes 页数：3 Pages

DOINGTER

杜因特

N-Channel Enhancement Mode Power MOSFET

Secos

喜可士

N-Channel Enhancement Mode Power MOSFET

文件：452.84 Kbytes 页数：4 Pages

SECOS

喜可士

54A , 100V , RDS(ON) 22m
N-Ch Enhancement Mode Power MOSFET

文件：1.94076 Mbytes 页数：4 Pages

SECOS

喜可士

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.027 Ω ■ AVALANCHERUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURREN

文件：94.57 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=50A@ TC=25℃ ·Drain Source Voltage -VDSS=100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.035Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：351.23 Kbytes 页数：2 Pages

ISC

无锡固电